A 0.4V, 790µW CMOS Low Noise Amplifier in the Sub-Threshold Region at 1.5GHz

Zafarian, Amin; Kalali Fard, Iraj; Golmakani, Abbas; Shirazi, Jalil

Document Type : Review Article

Authors

¹ Electrical Engineering Department, Islamic Azad University Branch Of Arak, Iran

² Institute of Communication Systems and Data Processing, RWTH Aachen University

³ Electrical Engineering Department, Sadjad Institute for Higher Education, Mashhad, Iran

⁴ Electrical Engineering Department, Islamic Azad University Branch Of Gonabad, Iran

Abstract

A fully integrated low-noise amplifier (LNA) with 0.4V supply voltage and ultra-low power consumption at 1.5GHz by folded cascode structure is presented. The proposed LNA is designed in a TSMC 0.18 µm CMOS technology, in which the all transistors are biased in sub-threshold region. Through the use of the proposed circuit for the gain enhancement in this structure and using forward body bias technique, a very high figure of merit is achieved, in comparison to the similar structures. The LNA provides a power gain of 14.7bB with a noise figure of 2.9dB while consuming only 790µW dc power. Also, the impedance matching of the input and output circuit in its operating frequency is desirable and in the whole circuit bandwidth, input and output isolation is below -33dB.

Keywords

References

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Majlesi Journal of Electrical Engineering

A 0.4V, 790µW CMOS Low Noise Amplifier in the Sub-Threshold Region at 1.5GHz

References

References

Volume 7, Issue 4 - Serial Number 4
December 2013
Pages 11-16

A 0.4V, 790µW CMOS Low Noise Amplifier in the Sub-Threshold Region at 1.5GHz

References

References

Volume 7, Issue 4 - Serial Number 4December 2013Pages 11-16

Volume 7, Issue 4 - Serial Number 4
December 2013
Pages 11-16