Document Type : Review Article
Authors
Abstract
Carbon nanotube field effect transistors (CNTFET) with extraordinary properties such as high carrier mobility, excellent thermal conductivity and high current carrying capability could be seen as a good replacement for CMOS technology. By connecting gate and drain in carbon nanotube field effect transistor, this device operates as a diode, similar to a diode-connected transistor in a silicon device. This paper presents a novel design of a high performance current mode (CM) precision full-wave rectifier by using just four diode-tied carbon nanotube field effect transistors. All simulations have been performed in HSPICE, and show that this circuit has an excellent performance at high frequencies.
Keywords
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