[1] E.Kargaran, Gh.Nabovati, M.R.Baghbanmanesh. Kh.Mafinezhad and H.Nabovati,” An Ultra Low Voltage Ultra High Gain CMOS LNA Using Forward Body Bias Technique,” in proceeding of IEEE 54th International Midwest Symposium on Circuits and Systems (MWSCAS), Seoul, Korea,2011.
[2] E.Kargaran, M.Mohammad Kazemi,” Design of 0.5V, 450µW CMOS LNA Using Current Reuse and Forward Body Bias Technique,” in Proceeding IEEE 5th European Conference on Circuits and Systems for Communications (ECCSC’10), Belgrade, Serbia, November ,2010, pp 93-96.
[3] S.Asgaran, M.J.Deen and C.H.Chen,” A 4-mW monolithic CMOS LNA at 5.7 GHz with the gate resistance used for input matching,” IEEE Microwave and Wireless Components Letters , vol. 16, no. 4, p. 188 - 190, 2006.
[4] H. W. Chiu, S. S. Lu, and Y.-S. Lin, “A 2.17-dB NF 5-GHz-band monolithic CMOS LNA with 10-mW dc power consumption,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 3, pp. 813–824, Mar. 2005.
[5] C. H. Liao and H. R. Chuang, “A 5.7 GHz 0.18 µm CMOS gain-controlled differential LNA with current reuse for WLAN receiver,” IEEE Microw. Wireless Compon. Lett., vol. 13, no. 12, pp. 526–528, Dec. 2003.
[6] E. Kargaran, H.Kargaran and H.Nabovati , “A 0.6v Ultra-High-Gain Ultra-Low-Power CMOS LNA at 1.5GHz in 0.18μm Technology ,” in Proceeding IEEE 2nd International Conference on Computer and Electrical Engineering (ICCEE) , December 2009, pp. 123-125.
[7] E.Kargaran, H.Khosrowjerdi, K.Ghaffarzadegan and H.Nabovati, “A 5.7GHz low noise figure ultra high gain CMOS LNA with inter stage technique,” IEICE Electron. Express, Vol. 7, No. 23, pp.1686-1693, 2010.
[8] D. Linten, S. Thijs, M. I. Natarajan, P. Wambacq, W. Jeamsaksiri, J. Ramos, A. Mercha, S. Jenei, S. Donnay, and S. Decoutere, “A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS,” IEEE J. Solid-State Circuits, vol. 40, no. 7, pp. 1434–1442, Jul. 2005.
[9] D. Linten, L. Aspemyr,W. Jeamsaksiri, J. Ramos, A. Mercha, S. Jenei, S. Thijs, R. Garcia, H. Jacobsson, P.Wambacq, S. Donnay, and S. Decoutere, “Low-power 5-GHz LNA and VCO in 90-nm RF CMOS,” in Dig. Tech. Papers IEEE Symp. VLSI Technol., Jun. 2004, pp. 372–375.
[10] M. N. El-Gamal, K. H. Lee, and T. K. Tsang, “Very low-voltage (0.8-V) CMOS receiver front-end for 5-GHz RF applications,” Proc. IEE Circuits, Devices, Syst., vol. 149, pp. 355–362, 2002.
[11] X. Jin, J. Ou, C.-H. Chen, W. Liu, M. J. Deen, P. R. Gray, and C. Hu, “An effective gate resistance model for CMOS RF and noise modeling,” Dig. Tech. papers IEDM, pp. 961–964, Dec. 1998.
[12] S. Asgaran, M. J. Deen, and C.-H. Chen, “Analytical modeling of MOSFET’s channel noise and noise parameters,” IEEE Trans. Electron. Devices, vol. 51, no. 12, pp. 2109–2114, Dec. 2004.
[13] Y. Cheng, M. J. Deen, and C.-H. Chen, “MOSFET modeling for RFIC design,” IEEE Trans. Electron. Devices, vol. 52, no. 7, pp. 1286–1303, Jul. 2005.
[14] M. J. Deen, C. H. Chen, S. Asgaran, A. Rezvani, J. Tao, and Y. Kiyota, “High-frequency noise of modern MOSFETs: Compact modeling and measurement issues,” IEEE Trans. Electron. Devices, vol. 53, no. 9, pp. 2062–2081, Sep. 2006.
[15] E. Kargaran, G. Nabovati, K. Mafinezhad and H.Nabovati, “An Ultra Low Voltage Ultra Low Power Folded Cascode CMOS LNA Using Forward Body Bias Technology for GPS application,” in the Proceedings of the IEEE 19th Iranian Conference on Electrical Engineering (ICEE), Tehran, Iran, May 2011.
[16] S. Maas, Nonlinear Microwave and RF Circuits, Artech House Publishers, 2003.
[17] V. Aparin and L. E. Larson, “Modified derivative superposition method for linearizing FET low-noise amplifiers,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 2, pp. 571–581, 2005.