A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering

Daghighi, Arash; Hoseini-Teshnizi, Jafar; Amini, GholamReza

Document Type : Review Article

Authors

¹ Department of Electrical Engineering, Faculty of Engineering, Shahrekord University, Iran

² Department of Electrical Engineering, IAU NajafAbad Branch

³ Faculty of Engineering, Shahrekord University

Abstract

A silicon on diamond structure to improve DIBL is presented. The electrical field penetration through the buried insulator of diamond degrades the DIBL. In the new structure, a second, double insulating material, e.g. SiO2 is added on top of the buried insulator and partially covers the diamond. The second insulating material has lower electrical permittivity. Therefore the fringing field capacitance is smaller. Simulation results of 22 nm silicon-on-diamond transistor shows 18% improvement in DIBL comparing with conventional SOD structure. Lattice temperature increase of 5% is observed in the new structure compared with the conventional SOD.

Keywords

References

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Majlesi Journal of Electrical Engineering

A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering

References

References

Volume 7, Issue 1 - Serial Number 1
March 2013

A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering

References

References

Volume 7, Issue 1 - Serial Number 1March 2013

Volume 7, Issue 1 - Serial Number 1
March 2013