Low Power Broadband sub-GHz CMOS LNA with 1 GHz Bandwidth for IoT Applications

Shirani Bidabadi, Farshad; Mir-Moghtadaei, Sayed Vahid

doi:10.30486/mjee.2022.696519

Document Type : Reseach Article

Authors

¹ ShahrekoShahrekord University, Department of Technology and Engineering, Shahrekord, Iranr University

² Shahrekord University, Department of Technology and Engineering, Shahrekord, Iran

https://doi.org/10.30486/mjee.2022.696519

Abstract

This paper presents a broadband low-power CMOS low noise amplifier (LNA) in 130 nm technology for sub-GHz Internet of Things (IoT) applications. The proposed circuit consists of a current reuse common source amplifier (CSA) in the forward path, and a positive simple transconductance amplifier (PSTA) in the feedback path. Theoretical calculation of the input admittance shows a positive part that presents a parallel inductance. This equivalent parallel inductance in the input can cancel out the input capacitance of CSA and electrostatic discharge (ESD) pad, enhancing the frequency bandwidth in the sub-GHz frequency band. Post-layout was simulated including ESD pads and package model in 130 nm CMOS technology, LNA achieves a voltage gain of 16.5 dB in a frequency bandwidth of 50 MHz to 1.1 GHz, noise figure (NF) of less than 2.4 dB, input return loss (S11) of -11 dB, input third order intercept point (IIP3) of -11 dBm and 1 mW power consumption from a 1 V power supply, showing a good figure of merit compared to other works. The occupied core area is less than 0.002 mm².

Keywords

References

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Majlesi Journal of Electrical Engineering

Low Power Broadband sub-GHz CMOS LNA with 1 GHz Bandwidth for IoT Applications

References

References

Volume 16, Issue 4 - Serial Number 4
December 2022
Pages 151-158

Low Power Broadband sub-GHz CMOS LNA with 1 GHz Bandwidth for IoT Applications

References

References

Volume 16, Issue 4 - Serial Number 4December 2022Pages 151-158

Volume 16, Issue 4 - Serial Number 4
December 2022
Pages 151-158